首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
CARRIER ACCUMULATION AND SPACE-CHARGE-LIMITED CURRENT FLOW IN FIELD-EFFECT TRANSISTORS
被引:13
作者
:
KIM, C
论文数:
0
引用数:
0
h-index:
0
KIM, C
YANG, ES
论文数:
0
引用数:
0
h-index:
0
YANG, ES
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1970年
/ 13卷
/ 12期
关键词
:
D O I
:
10.1016/0038-1101(70)90036-5
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1577 / &
相关论文
共 14 条
[1]
[Anonymous], IEEE T ELECT DEVICES
[2]
PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON
DENDA, S
论文数:
0
引用数:
0
h-index:
0
DENDA, S
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
: 2412
-
&
[3]
THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF
GEURST, JA
论文数:
0
引用数:
0
h-index:
0
GEURST, JA
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(02)
: 129
-
+
[4]
GREGORY BL, 1964, J APPL PHYS, V35, P753
[5]
GUMMEL HK, 1964, IEEE T, VED11, P455
[6]
KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120
[7]
A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS
MIDDLEBROOK, RD
论文数:
0
引用数:
0
h-index:
0
MIDDLEBROOK, RD
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(08)
: 1146
-
&
[8]
TRANSITION FROM PENTODE- TO TRIODE-LIKE CHARACTERISTICS IN FIELD EFFECT TRANSISTORS
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(04)
: 299
-
&
[9]
BASIC LIMITS ON THE PROPERTIES OF FIELD-EFFECT TRANSISTORS
RICHER, I
论文数:
0
引用数:
0
h-index:
0
RICHER, I
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(05)
: 539
-
542
[10]
THEORY OF SURFACE GATE DIELECTRIC TRIODE
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(09)
: 885
-
&
←
1
2
→
共 14 条
[1]
[Anonymous], IEEE T ELECT DEVICES
[2]
PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON
DENDA, S
论文数:
0
引用数:
0
h-index:
0
DENDA, S
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
: 2412
-
&
[3]
THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF
GEURST, JA
论文数:
0
引用数:
0
h-index:
0
GEURST, JA
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(02)
: 129
-
+
[4]
GREGORY BL, 1964, J APPL PHYS, V35, P753
[5]
GUMMEL HK, 1964, IEEE T, VED11, P455
[6]
KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120
[7]
A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS
MIDDLEBROOK, RD
论文数:
0
引用数:
0
h-index:
0
MIDDLEBROOK, RD
[J].
PROCEEDINGS OF THE IEEE,
1963,
51
(08)
: 1146
-
&
[8]
TRANSITION FROM PENTODE- TO TRIODE-LIKE CHARACTERISTICS IN FIELD EFFECT TRANSISTORS
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(04)
: 299
-
&
[9]
BASIC LIMITS ON THE PROPERTIES OF FIELD-EFFECT TRANSISTORS
RICHER, I
论文数:
0
引用数:
0
h-index:
0
RICHER, I
[J].
SOLID-STATE ELECTRONICS,
1963,
6
(05)
: 539
-
542
[10]
THEORY OF SURFACE GATE DIELECTRIC TRIODE
RITTNER, ES
论文数:
0
引用数:
0
h-index:
0
RITTNER, ES
NEUMARK, GF
论文数:
0
引用数:
0
h-index:
0
NEUMARK, GF
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(09)
: 885
-
&
←
1
2
→