COMPUTER CALCULATIONS OF AVALANCHE-INDUCED RELAXATION OSCILLATIONS IN SILICON DIODES

被引：10
|
作者：
WARD, AL
UDELSON, BJ
机构：
[1] Harry Diamond Laboratories
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 11期
关键词：
D O I：
10.1109/T-ED.1968.16525
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A digital computer program has been employed to study relaxation oscillations of a silicon p-i-n junction diode reverse-biased into avalanche. The computed plots of diode current and voltage versus time and of diode current versus diode voltage are in good agreement with those obtained experimentally by Hoefflinger. The electric field and charge density distributions across the junction are given for selected times during the breakdown and current decay phases of the oscillations. The electric field is characterized by the formation of a saddle during the avalanche buildup. The variations of power output, efficiency, frequency, and average diode voltage are presented as a function of average current for one particular set of diode and circuit parameters. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码：847 / +
页数：1
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