STRUCTURAL-ANALYSIS OF AN SI/COSI2/SI HETEROSTRUCTURE USING ULTRAHIGH RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

被引：28
作者：
DANTERROCHES, C
DAVITAYA, FA
机构：
[1] CNET, Meylan, Fr, CNET, Meylan, Fr
来源：
THIN SOLID FILMS | 1986年 / 137卷 / 02期
关键词：
CRYSTALS - Structure - MICROSCOPIC EXAMINATION;
D O I：
10.1016/0040-6090(86)90036-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The double heteroepitaxy of the Si/CoSi//2Si system was studied. The thickness of the CoSi//2 layer (7 nm) was chosen so as to obtain a completely strained CoSi//2 film. The structure of the material was analyzed using transmission electron microscopy in the LT AN BR 111 RT AN BR and LT AN BR 011 RT AN BR directions of the specimens. The high resolution images seem to indicate that the interface model differs from that obtained for a CoSi//2Si interface, i. e. without double epitaxy.
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收藏
页码：351 / 361
页数：11
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