SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS

被引:14
|
作者
MADDEN, TC
GIBSON, WM
机构
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 1963年 / 34卷 / 01期
关键词
D O I
10.1063/1.1718121
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:50 / +
页数:1
相关论文
共 50 条
  • [11] Silicon photodiode with a grid p-n junction
    V. I. Blynskii
    Y. G. Vasileuskii
    S. A. Malyshev
    A. L. Chizh
    Semiconductors, 2007, 41 : 875 - 875
  • [12] Silicon photodiode with a grid p-n junction
    Blynskii, V. I.
    Vasileuskii, Yu. G.
    Malyshev, S. A.
    Chizh, A. L.
    SEMICONDUCTORS, 2007, 41 (02) : 223 - 226
  • [13] NOISE IN SILICON P-N JUNCTION PHOTOCELLS
    PEARSON, GL
    MONTGOMERY, HC
    FELDMANN, WL
    JOURNAL OF APPLIED PHYSICS, 1956, 27 (01) : 91 - 92
  • [14] DIFFUSED P-N JUNCTION SILICON RECTIFIERS
    PRINCE, MB
    BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 661 - 684
  • [15] Thermopower profiling of a silicon p-n junction
    Kim, Kyeongtae
    Park, Jisang
    Kim, Sun Ung
    Kwon, Ohmyoung
    Lee, Joon Sik
    Park, Seungho Ho
    Choi, Young Ki
    APPLIED PHYSICS LETTERS, 2007, 90 (04)
  • [16] NOISE IN SILICON P-N JUNCTION PHOTOCELLS
    PEARSON, GL
    MONTGOMERY, HC
    FELDMANN, WL
    PHYSICAL REVIEW, 1955, 98 (05): : 1567 - 1567
  • [17] USE OF SILICON P-N JUNCTION DETECTORS IN STUDIES OF NUCLEAR REACTIONS INDUCED BY HEAVY IONS
    LARSH, AE
    GORDON, GE
    SIKKELAND, T
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1960, 31 (10): : 1114 - 1118
  • [18] The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles
    Verbitskaya, E
    Abreu, M
    Anbinderis, P
    Anbinderis, T
    D'Ambrosio, N
    de Boer, W
    Borchi, E
    Borer, K
    Bruzzi, M
    Buontempo, S
    Casagrande, L
    Chen, W
    Cindro, V
    Dezillie, B
    Dierlamm, A
    Eremin, V
    Gaubas, E
    Gorbatenko, V
    Granata, V
    Grigoriev, E
    Grohmann, S
    Hauler, F
    Heijne, E
    Heising, S
    Hempel, O
    Herzog, R
    Härkönen, J
    Ilyashenko, I
    Janos, S
    Jungermann, L
    Kalesinskas, V
    Kapturauskas, J
    Laiho, R
    Li, Z
    Mandic, I
    De Masi, R
    Menichelli, D
    Mikuz, M
    Militaru, O
    Niinikoski, TO
    O'Shea, V
    Pagano, S
    Palmieri, VG
    Paul, S
    Solano, BP
    Piotrzkowski, K
    Pirollo, S
    Pretzl, K
    Mendes, PR
    Ruggiero, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 514 (1-3): : 47 - 61
  • [19] Infrared detectors based on semiconductor p-n junction of PbSe
    Kasiyan, Vladimir
    Dashevsky, Zinovi
    Schwarz, Casey Minna
    Shatkhin, M.
    Flitsiyan, Elena
    Chernyak, Leonid
    Khokhlov, Dmitry
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
  • [20] Effects of a p-n junction on heterojunction far infrared detectors
    Matsik, S. G.
    Rinzan, M. B. M.
    Perera, A. G. U.
    Tan, H. H.
    Jagadish, C.
    Liu, H. C.
    INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) : 274 - 278