USE OF QUASISTATIC CV METHOD IN INVESTIGATING DENSITY OF STATES OF SI-SIO2 INTERFACE IN A MOS SYSTEM

被引：0

作者：

KASCHIEV.SB ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI, INST SOLID STATE PHYS, SOFIA, BULGARIA

来源：

DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE | 1974年 / 27卷 / 02期

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D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：181 / 184

页数：4

共 50 条

[1] GRAPHICAL TECHNIQUE TO DETERMINE DENSITY OF SURFACE STATES AT SI-SIO2 INTERFACE OF MOS DEVICES USING QUASISTATIC C-V METHOD
VANOVERSTRAETEN, R
DECLERCK, G
BROUX, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1785 - 1787
[2] STRUCTURE OF THE DENSITY OF STATES AT THE SI-SIO2 INTERFACE
PONOMAREV, AN
PRIKHODKO, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 270 - 272
[3] INTERFACE STATES AND INTERFACE DISORDER IN SI-SIO2 SYSTEM
REVESZ, AG
ZAININGER, KH
EVANS, RJ
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (02) : 197 - +
[4] INTERFACE STATES OF SI-SIO2 SYSTEM AND THEIR SEPARATION IN GROUPS
FLIETNER, H
FUSSEL, W
SINH, ND
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01): : K99 - K101
[5] CRYSTAL ANISOTROPY OF DENSITY OF SURFACE STATES AT SI-SIO2 INTERFACE
KAWAMURA, N
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (03) : 254 - &
[6] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[7] RECONSTRUCTING STATES AT THE SI-SIO2 INTERFACE
WHITE, CT
NGAI, KL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1412 - 1417
[8] FAST STATES AT SI-SIO2 INTERFACE
KAWAMURA, N
IWASAKI, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : C216 - &
[9] CHARACTER OF SI-SIO2 INTERFACE STATES FROM ANALYSIS OF CV TERM SPECTRA
FLIETNER, H
SINH, ND
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (02): : 533 - 539
[10] CHARACTERIZATION OF SI-SIO2 INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE
LU, LW
GROESENDKEN, G
HASENACK, C
CHINESE PHYSICS LETTERS, 1989, 6 (12): : 545 - 548

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