CONDUCTION-ELECTRON SPIN-RESONANCE IN ZINCBLENDE GAN THIN-FILMS

We report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533+/-0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was estimated to be T-le=(6+/-2)X10(-5) sec. Using a five-band model a g value consistent with the experimental results was obtained and a conduction-electron effective mass m*/m(0)=0.15+/-0.01 was calculated. The observed signal, together with conductivity data, was attributed to nonlocalized electrons in a band of autodoping centers and in the conduction band.