ELLIPSOMETRIC STUDY OF 400 EV ION DAMAGE IN SILICON

被引：38

作者：

IBRAHIM, MM

BASHARA, NM

机构：

来源：

SURFACE SCIENCE | 1972年 / 30卷 / 03期

关键词：

D O I：

10.1016/0039-6028(72)90051-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：632 / &

共 13 条

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[8] STUDY OF ION-BOMBARDMENT DAMAGE ON A GE (111) SURFACE BY LOW-ENERGY ELECTRON DIFFRACTION [J].

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