PASSIVATION AND INTERFACE STATE STUDIES ON N-GAAS

被引：22

作者：

FRESE, KW

MORRISON, SR

机构：

来源：

APPLIED SURFACE SCIENCE | 1981年 / 8卷 / 03期

关键词：

D O I：

10.1016/0378-5963(81)90122-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：266 / 277

页数：12

共 23 条

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COLEMAN, JJ ;

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[8] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES [J].

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[9] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES [J].

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