CALCULATION OF THE CARRIER-INDUCED REFRACTIVE-INDEX CHANGE IN INSB

被引：21

作者：

PASKOV, PP

PAVLOV, LI

机构：

[1] Institute of Electronics, Sofia, BG-1784

来源：

APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1992年 / 54卷 / 02期

关键词：

D O I：

10.1007/BF00331882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of DELTA-n within the photon-energy interval of 0.12-0.24 eV is investigated for nonequilibrium carrier concentrations of 10(15)-10(18) cm-3. An analysis of the influence of the initial carrier density on DELTA-n is performed. The obtained results can help to develop InSb opto-electronic devices.

引用

页码：113 / 118

页数：6

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