CALCULATION OF THE CARRIER-INDUCED REFRACTIVE-INDEX CHANGE IN INSB

被引：21
|
作者：
PASKOV, PP
PAVLOV, LI
机构：
[1] Institute of Electronics, Sofia, BG-1784
来源：
APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1992年 / 54卷 / 02期
关键词：
D O I：
10.1007/BF00331882
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of DELTA-n within the photon-energy interval of 0.12-0.24 eV is investigated for nonequilibrium carrier concentrations of 10(15)-10(18) cm-3. An analysis of the influence of the initial carrier density on DELTA-n is performed. The obtained results can help to develop InSb opto-electronic devices.
引用
收藏
页码：113 / 118
页数：6
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