REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION

被引:43
作者
ALIBERT, C [1 ]
SKOURI, M [1 ]
JOULLIE, A [1 ]
BENOUNA, M [1 ]
SADIQ, S [1 ]
机构
[1] UNIV BAGHDAD,COLL ENGN,DEPT ELECTR & COMMUN,BAGHDAD,IRAQ
关键词
D O I
10.1063/1.348538
中图分类号
O59 [应用物理学];
学科分类号
摘要
The refractive indices of AlSb grown by the solute diffusion method and GaSb-lattice-matched Al(x)Ga(1-x)AS(y)Sb1-y alloy grown by liquid-phase epitaxy have been determined at room temperature from accurate measurements of the reflectance of p-polarized light as a function of the angle of incidence. The refractive index variations versus the photon energy were obtained in the spectral range 0.5-1.5 eV. Experimental data in the transparent wavelength region could be matched by calculated curves on the basis of a single-oscillator model.
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页码:3208 / 3211
页数:4
相关论文
共 25 条
  • [11] REFRACTIVE INDEX OF ALAS
    FERN, RE
    ONTON, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3499 - &
  • [12] CHARACTERISTIC TEMPERATURE T0 OF GA0.83IN0.17AS0.15SB0.85/AL0.27GA0.73AS0.02SB0.98 INJECTION-LASERS
    JOULLIE, A
    ALIBERT, C
    MANI, H
    PITARD, F
    TOURNIE, E
    BOISSIER, G
    [J]. ELECTRONICS LETTERS, 1988, 24 (17) : 1076 - 1078
  • [13] Joullie A., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V587, P46, DOI 10.1117/12.951200
  • [14] THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS
    LAW, HD
    CHIN, R
    NAKANO, K
    MILANO, RA
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 275 - 283
  • [15] REFRACTIVE INDEX OF GAAS
    MARPLE, DTF
    [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1241 - &
  • [16] NAHORY RE, 1975, APPL PHYS LETT, V28, P19
  • [17] Orsal B., 1986, Noise in Physical Systems and 1/f Noise - 1985. Proceedings of the 8th International Conference on `Noise in Physical Systems' and the 4th International Conference on `1/f Noise', P185
  • [18] PITARD F, UNPUB
  • [19] ELECTRICAL CHARACTERISTICS OF AU/P-ALSB METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY DIODES
    SADIQ, S
    JOULLIE, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4924 - 4927
  • [20] SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499