INTERPRETATION OF ALPHA-VALUES IN P-N JUNCTION TRANSISTORS

被引：7

作者：

GOUCHER, FS

PRINCE, MB

机构：

来源：

PHYSICAL REVIEW | 1953年 / 89卷 / 03期

关键词：

D O I：

10.1103/PhysRev.89.651

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：651 / 653

页数：3

共 5 条

[1] THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].

GOUCHER, FS ;

PEARSON, GL ;

SPARKS, M ;

TEAL, GK ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (04) :637-638

[2] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J].

GOUCHER, FS .

PHYSICAL REVIEW, 1951, 81 (03) :475-475

[3] P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W ;

SPARKS, M ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (01) :151-162

[4] GROWTH OF GERMANIUM SINGLE CRYSTALS CONTAINING P-N JUNCTIONS [J].

TEAL, GK ;

SPARKS, M ;

BUEHLER, E .

PHYSICAL REVIEW, 1951, 81 (04) :637-637

[5]

VALDES LB, IN PRESS