PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS

被引：52

作者：

ELSAID, M

TOMAK, M

机构：

[1] Department of Physics, Middle East Technical University, Ankara

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1991年 / 52卷 / 04期

关键词：

QUANTUM WELLS; SEMICONDUCTORS; SHALLOW IMPURITIES; PHOTOIONIZATION; MAGNETIC FIELD;

D O I：

10.1016/0022-3697(91)90154-R

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.

引用

页码：603 / 606

页数：4

共 14 条

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