INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE ON SULFIDE PASSIVATED INP

被引：56
作者：
LAU, WM [1 ]
JIN, S [1 ]
WU, XW [1 ]
INGREY, S [1 ]
机构：
[1] BELL NO RES, STN C, OTTAWA K1Y 4H7, ONTARIO, CANADA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.584977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：848 / 855
页数：8
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