TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C

被引：18
作者：
CAPASSO, F
NAHORY, RE
POLLACK, MA
机构：
[1] Bell Laboratories, Holmdel
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 04期
关键词：
Gallium arsenide; Impact ionisation; Impatt diodes;
D O I：
10.1049/el:19790086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the temperature dependence, between 20° and 200°C, of free carrier impact ionisation rates in GaAs along the 〈100〉, 〈110〉 and 〈 111〉 directions for the electric field range 4.5 × 105 V/cm. These results should be of interest for the design of avalanche devices such as Impatt diodes which have high operating temperatures.© 1979, The Institution of Electrical Engineers. All rights reserved.
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页码：117 / 118
页数：2
相关论文
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