CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE

被引：18
作者：
ANDERSON, CL
VAIDYANATHAN, KV
DUNLAP, HL
KAMATH, GS
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 04期
关键词：
D O I：
10.1149/1.2129788
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：925 / 927
页数：3
相关论文
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