MULTIPLICATION NOISE OF WIDE-BANDWIDTH INP/INGAASP/INGAAS AVALANCHE PHOTODIODES

被引：79

作者：

CAMPBELL, JC

CHANDRASEKHAR, S

TSANG, WT

QUA, GJ

JOHNSON, BC

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1109/50.16883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：473 / 478

页数：6

相关论文

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[8] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
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[9] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
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[10] IMPROVED FREQUENCY-RESPONSE OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION, GRADING AND MULTIPLICATION REGIONS
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