RAPID THERMAL NITRIDATION OF SIO2-FILMS

被引：10

作者：

ELFERINK, JBO ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDERWEG, WF ^{[1
]}

DOOMS, E ^{[1
]}

HEYNS, M ^{[1
]}

DEKEERSMAECKER, R ^{[1
]}

机构：

[1] IMEC VZW,B-3030 LOUVAIN,BELGIUM

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90436-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：219 / 226

页数：8

共 19 条

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[2]

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[4] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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[5]

HEIJNS M, 1989, IN PRESS INFOS 89

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ITO, T ;

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[8] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

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[9] SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS [J].

KAGA, T ;

HAGIWARA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :929-934

[10] THERMAL NITRIDATION OF SIO2 THIN-FILMS ON SI AT 1150-DEGREES-C [J].

KOBA, R ;

TRESSLER, RE .

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