LOW-TEMPERATURE DIFFUSION OF AL INTO POLYCRYSTALLINE SI

被引：24

作者：

NAKAMURA, K

KAMOSHIDA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5349 / 5351

页数：3

共 9 条

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[3]

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[6] TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI [J].

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LAU, SS ;

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[7] INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

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SHIMA, R .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1278-1283

[8] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

NICOLET, MA ;

MAYER, JW ;

BLATTNER, RJ ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4678-4684

[9]

NAKAMURA K, 1975, ELECTROCHEM SOC EXT, V75, P122

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