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- [2] THE TEMPERATURE DEPENDENCE OF THE MOBILITY OF ELECTRONS IN GERMANIUMPROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08): : 845 - 846EVANS, DM
- [3] TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF SUBMILLIMETER RADIATION IN COMPENSATED GERMANIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1122 - 1124VAVILOV, VSKAZANSKII, AGKOSHELEV, OGPLESKACHEVA, TBSAPTSIN, VMTSIKUNOV, AV
- [4] TEMPERATURE-DEPENDENCE OF THE DRIFT MOBILITY IN SILICON IRRADIATED WITH FAST ELECTRONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1427 - 1428BEZLYUDNYI, SVKOLESNIKOV, NV
- [5] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND PEAK VELOCITY IN COMPENSATED GAASAPPLIED PHYSICS LETTERS, 1988, 52 (11) : 922 - 923XU, JMSHUR, M
- [6] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF GERMANIUMPHYSICAL REVIEW B, 1984, 30 (04): : 1979 - 1991VINA, LLOGOTHETIDIS, SCARDONA, M
- [7] TEMPERATURE-DEPENDENCE OF THE LIFETIME IN PURE GERMANIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 688 - 689ASHKINADZE, BMTEVS, NR
- [8] ANOMALOUS TEMPERATURE-DEPENDENCE OF HALL-MOBILITY IN COMPENSATED N-TYPE GESOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 229 - 230GOLOVKINA, EDLEVCHENYA, NNSHIK, AY
- [9] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN THE DELTA-1C MINIMA OF GERMANIUMJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (10): : L379 - L383AHMAD, CNADAMS, ARPITT, GD