PHOTO-LUMINESCENCE AS A DIAGNOSTIC OF SEMICONDUCTORS

被引:92
作者
DEAN, PJ
机构
关键词
D O I
10.1016/0146-3535(82)90010-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:89 / 174
页数:86
相关论文
共 225 条
[1]  
ALMBLADH CO, UNPUB PHYS REV
[2]  
APSLEY N, UNPUB
[3]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[4]   RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP [J].
BACHRACH, RZ ;
LORIMOR, OG .
PHYSICAL REVIEW B, 1973, 7 (02) :700-713
[5]  
BARAFF GA, 1980, J PHYS SOC JPN, V49, P231
[6]   SEM AND TEM - DIFFUSION OF LITHIUM IN ZNTE [J].
BENSAHEL, D ;
DUPUY, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :203-210
[7]  
BERGH AA, 1976, LIGHT EMITTING DIODE, pCH3
[8]  
Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X
[9]  
BIMBERG D, 1978, PHYS REV B, V18, P1974
[10]   PHOTO-LUMINESCENCE EXCITATION SPECTROSCOPY OF 3D TRANSITION-METAL IONS IN GAP AND ZNSE [J].
BISHOP, SG ;
DEAN, PJ ;
PORTEOUS, P ;
ROBBINS, DJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (07) :1331-1340