GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS

被引：64
作者：
DUCHEMIN, JP
HIRTZ, JP
RAZEGHI, M
BONNET, M
HERSEE, SD
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期
关键词：
D O I：
10.1016/0022-0248(81)90272-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：64 / 73
页数：10
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