LATERAL VARIATION OF INDIUM CONTENT IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

WAKEJIMA, A

INOUE, A

KITADA, T

TOMITA, N

SHIMOMURA, S

HIYAMIZU, S

FUJII, M

YAMAMOTO, T

KOBAYASHI, K

SANO, N

机构：

[1] ATR OPT & RADIO COMMUN RES LABS,KYOTO 61902,JAPAN

[2] KWANSEI GAKUIN UNIV,FAC SCI,NISHINOMIYA,HYOGO 662,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral variation of In content in a 1.5 mum thick InxGa1-xAs (x congruent-to 0.2) epilayer grown on channeled GaAs (100) substrates having (755)A or (411)A slope regions by molecular beam epitaxy (MBE) was studied by the energy dispersive x-ray spectroscopy, with high spatial resolution (0.6 mum). Significantly peculiar migration of In atoms on the (41 I)A was observed. Experimental data of this work strongly suggest that In atoms migrate preferentially in one way, that is to say, they migrate much more in the [122BAR] direction than in the opposite [122BAR] direction on the (411)A plane during MBE growth. The migration length of In atoms on the (100) plane was 5 mum when InGaAs was grown at T(s) = 570-degrees-C and V/III = 30.

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页码：1102 / 1105

页数：4

相关论文

共 9 条

[1] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS [J].

ARENT, DJ ;

NILSSON, S ;

GALEUCHET, YD ;

MEIER, HP ;

WALTER, W .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2611-2613

[2] GROWTH OF INXGA1-XAS ON PATTERNED GAAS (100) SUBSTRATES [J].

GUHA, S ;

MADHUKAR, A ;

KAVIANI, K ;

KAPRE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :149-153

[3] LATERAL BAND-GAP PATTERNING AND CARRIER CONFINEMENT IN INGAAS/GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY ON NONPLANAR DOT PATTERNS [J].

KRAHL, M ;

KAPON, E ;

SCHIAVONE, LM ;

VANDERGAAG, BP ;

HARBISON, JP ;

FLOREZ, LT .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :813-815

[4] REALIZATION OF LOW DEFECT DENSITY, ULTRATHICK, STRAINED INGAAS/GAAS MULTIPLE QUANTUM-WELL STRUCTURES VIA GROWTH ON PATTERNED GAAS (100) SUBSTRATES [J].

MADHUKAR, A ;

RAJKUMAR, KC ;

CHEN, L ;

GUHA, S ;

KAVIANI, K ;

KAPRE, R .

APPLIED PHYSICS LETTERS, 1990, 57 (19) :2007-2009

[5] SURFACE SEGREGATION IN III-V ALLOYS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

GERARD, JM ;

JUSSERAND, B ;

MASSIES, J ;

TURCOSANDROFF, FS .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :141-150

[6] SURFACE SEGREGATION OF IN ATOMS AND ITS INFLUENCE ON THE QUANTIZED LEVELS IN INGAAS/GAAS QUANTUM-WELLS [J].

MURAKI, K ;

FUKATSU, S ;

SHIRAKI, Y ;

ITO, R .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :546-549

[7] SURFACE SEGREGATION OF IN ATOMS DURING MOLECULAR-BEAM EPITAXY AND ITS INFLUENCE ON THE ENERGY-LEVELS IN INGAAS/GAAS QUANTUM-WELLS [J].

MURAKI, K ;

FUKATSU, S ;

SHIRAKI, Y ;

ITO, R .

APPLIED PHYSICS LETTERS, 1992, 61 (05) :557-559

[8] NEAR-INFRARED CATHODOLUMINESCENCE IMAGING OF DEFECT DISTRIBUTIONS IN IN0.2GA0.8AS/GAAS MULTIPLE QUANTUM-WELLS GROWN ON PREPATTERNED GAAS [J].

RICH, DH ;

RAJKUMAR, KC ;

CHEN, L ;

MADHUKAR, A ;

GRUNTHANER, FJ .

APPLIED PHYSICS LETTERS, 1992, 61 (02) :222-224

[9] PSEUDOMORPHIC INGAAS/ALAS QUANTUM-WELLS GROWN ON GAAS CHANNELED SUBSTRATES BY MBE [J].

YAMAKAWA, S ;

HISADA, M ;

SHIMOMURA, S ;

YUBA, Y ;

NAMBA, S ;

OKAMOTO, Y ;

SHIGETA, M ;

YAMAMOTO, T ;

KOBAYASHI, K ;

SANO, N ;

HIYAMIZU, S .

SURFACE SCIENCE, 1992, 267 (1-3) :21-25