ELECTRONIC TRANSPORT THROUGH SEMICONDUCTOR BARRIERS

被引:13
|
作者
CHAABANE, H
ZAZOUI, M
BOURGOIN, JC
DONCHEV, V
机构
[1] UNIV PARIS 07,PHYS SOLIDES GRP,CNRS,F-75251 PARIS 05,FRANCE
[2] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTO ELECTR,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND
关键词
D O I
10.1088/0268-1242/8/12/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron transport across rectangular barriers, made of 200 angstrom thick GaAlAs layers embedded in GaAs, and triangular barriers at the (n+)GaAs (n)GaInP interface has been studied. Current versus voltage and temperature characteristics have been analysed in order to extract the different mechanisms that induce this transport, and to determine the temperature and electric field range in which they apply. At low temperature and high field the current is driven by the Fowler-Nordheim regime. At higher temperatures the current is dominated by a defect-induced mechanism. This mechanism consists of the thermal emission of electrons into the barrier conduction band from defects lying in the barrier that can be refilled by tunnelling. The defect involved appears to be the deep state associated with the donor impurity, i.e. the DX centre. This study demonstrates that the apparent band offset depends strongly on the experimental conditions under which it is measured.
引用
收藏
页码:2077 / 2084
页数:8
相关论文
共 50 条
  • [41] Electronic transport through a bending contact
    Schröter, U
    ACTA PHYSICA POLONICA A, 2006, 109 (03) : 305 - 310
  • [42] Spin polarized tunneling through diluted magnetic semiconductor barriers
    Chang, K
    Peeters, FM
    SOLID STATE COMMUNICATIONS, 2001, 120 (5-6) : 181 - 184
  • [43] CURRENT TRANSPORT OVER PARABOLIC POTENTIAL BARRIERS IN SEMICONDUCTOR-DEVICES
    CROWELL, CR
    HAFIZI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1087 - 1095
  • [44] Electronic transport in single molecule junctions: Control of the molecule-electrode coupling through intramolecular tunneling barriers
    Danilov, Andrey
    Kubatkin, Sergey
    Kafanov, Sergey
    Hedegard, Per
    Stuhr-Hansen, Nicolai
    Moth-Poulsen, Kasper
    Bjornholm, Thomas
    NANO LETTERS, 2008, 8 (01) : 1 - 5
  • [45] Electronic transport in nanostructures consisting of magnetic-electric barriers
    Lu, MW
    Zhang, LD
    Yan, XH
    CHINESE PHYSICS LETTERS, 2003, 20 (01): : 124 - 126
  • [46] Semiconductor superlattices: Artificial crystals with unique electronic and transport properties
    Grahn, HT
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 259 - 261
  • [47] Transport properties in semiconductor-gas discharge electronic devices
    Sadiq, Y.
    Kurt, H.
    Albarzanji, A. O.
    Alekperov, S. D.
    Salamov, B. G.
    SOLID-STATE ELECTRONICS, 2009, 53 (09) : 1009 - 1015
  • [48] ON QUANTUM HYDRODYNAMIC MODELS FOR ELECTRONIC TRANSPORT IN NANOSCALE SEMICONDUCTOR DEVICES
    Tulcan-Paulescu, Eugenia
    Comanescu, Dan
    Paulescu, Marius
    MODERN PHYSICS LETTERS B, 2010, 24 (4-5): : 401 - 409
  • [49] Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer
    Xu, Huidong
    Amann, Andreas
    Schoell, Eckehard
    Teitsworth, Stephen W.
    PHYSICAL REVIEW B, 2009, 79 (24)
  • [50] Design principles of selective transport through biopolymer barriers
    Maguire, Laura
    Stefferson, Michael
    Betterton, Meredith
    Hough, Loren
    PHYSICAL REVIEW E, 2019, 100 (04)