DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON (VOL 47, PG 3661, 1993)

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作者：

GANGULY, G

MATSUDA, A

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来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 03期

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D O I：

10.1103/PhysRevB.48.2025.2

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T [工业技术];

学科分类号：

08 ;

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页码：2025 / 2025

页数：1

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