DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON (VOL 47, PG 3661, 1993)

被引：0
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作者：
GANGULY, G
MATSUDA, A
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来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 03期
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D O I：
10.1103/PhysRevB.48.2025.2
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T [工业技术];
学科分类号：
08 ;
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页码：2025 / 2025
页数：1
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