CHARACTERIZATION OF AN INP(001)-P(2 X 4) SURFACE-EXPOSED TO ATOMIC DEUTERIUM AT ROOM-TEMPERATURE BY MEANS OF LEED, AES, NRA AND RBS-CHANNELING TECHNIQUES

The exposure of the cleaned InP(001)-p(2 X 4) surface to atomic deuterium at room temperature has been studied by means of LEED, AES, NRA and RBS-channeling techniques. It is found that the LEED pattern for the InP(001) surface changed from p(2 X 4), through p(1 X 4), to p(1 X 1) with increasing the coverage of adsorbed deuterium up to 2 ML, which is the saturation coverage, and that the p(1 X 1) pattern also completely returned to p(2 X 4) by isochronal annealing up to 320-degrees-C for 15 min. The intensity of In MNN Auger electrons increases slightly, while the intensity of P LMM Auger electrons decreases with increasing the deuterium coverage. The In surface peak by RBS-channeling also decreases slightly. Based on these data, the change of the atomic structure of InP(001) surface due to deuterium adsorption is discussed.