TRANSMISSION AND REFLECTION ELECTRON-MICROSCOPY OF ELECTROMIGRATION PHENOMENA

被引:16
作者
VOOK, RW
机构
[1] Physics Department, Syracuse University, Syracuse
关键词
D O I
10.1016/0254-0584(94)90031-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The traditional model of electromigration damage resulting from grain boundary migration has been modified to include surface diffusion effects. The model is based on detailed TEM and SEM observations taken before, during and after current stressing. Significant effects were caused by the thin oxide overlayer that grows naturally on Al and Al-rich alloys during air exposure. The stresses applied by a typical thick passivation layer would surely modify the experimental results in ways that depend crucially on the exact experimental situation. Examples are also presented that show that where grain boundary migration was hindered or absent, surface diffusion phenomena became the dominant damage mechanism. The observations presented or referred to in this review and the interpretation of them should prove useful in helping our understanding of more complex electromigration phenomena.
引用
收藏
页码:199 / 216
页数:18
相关论文
共 112 条
[1]   EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS [J].
AGARWALA, BN ;
PATNAIK, B ;
SCHNITZE.R .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1487-&
[2]   COATING, MECHANICAL CONSTRAINTS, AND PRESSURE EFFECTS ON ELECTROMIGRATION [J].
AINSLIE, NG ;
WELLS, OC ;
DHEURLE, FM .
APPLIED PHYSICS LETTERS, 1972, 20 (04) :173-&
[3]  
[Anonymous], 1973, METALS HDB, V8, P259
[4]  
ARZT E, 1992, MATER RES SOC SYMP P, V239, P677
[5]   A MODEL FOR THE EFFECT OF LINE-WIDTH AND MECHANICAL STRENGTH ON ELECTROMIGRATION FAILURE OF INTERCONNECTS WITH NEAR-BAMBOO GRAIN STRUCTURES [J].
ARZT, E ;
NIX, WD .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (04) :731-736
[6]   SPECIAL ASPECTS OF DIFFUSION IN THIN-FILMS [J].
BALLUFFI, RW ;
BLAKELY, JM .
THIN SOLID FILMS, 1975, 25 (02) :363-392
[7]   ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS [J].
BERENBAUM, L .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :880-+
[8]   STUDY OF FAILURE MECHANISMS IN AL-CU THIN FILMS BY HIGH-VOLTAGE ELECTRON MICROSCOPY [J].
BERENBAUM, L ;
PATNAIK, B .
APPLIED PHYSICS LETTERS, 1971, 18 (07) :284-+
[9]  
BLACK JR, 1967, IEEE INT REL PHYS S, P148
[10]   ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208