ELECTRONIC-STRUCTURE DETERMINATION OF ION-BEAM-SYNTHESIZED COSI2 USING PHOTON-IN PHOTON-OUT SPECTROSCOPIES

The electronic structure of crystalline CoSi2 produced by ion-beam synthesis has been studied. Using fluorescence spectroscopies, we have taken advantage of the large photon penetration depth to obtain information from silicide layers, buried several hundred Angstroms deep in Si wafers, prepared by ion-beam synthesis. The unoccupied local Co d density of states (DOS) was determined via the Co L3 near-edge absorption spectrum, measured in the fluorescence-yield mode. The occupied local Co d DOS was determined via the Co L3 emission spectrum, excited both with photons and with high-energy electrons. The results show that the buried layers have the electronic structure of crystalline CoSi2 and that the states in the vicinity of the Fermi level have nonbonding character.