PHONON-SCATTERING AND THERMAL CONDUCTION MECHANISMS OF SINTERED ALUMINUM NITRIDE CERAMICS

From thermal diffusivity measurements of sintered AIN at temperatures ranging from 1 00 to 1000 K, the phonon mean free path of AIN was calculated in order to investigate phonon scattering mechanisms. The calculated mean phonon scattering distance was increased with decreasing temperature. The mean phonon-defect scattering distances were respectively limited to about 50 nm at temperatures ranging from 100 to 270 K and about 30 nm at temperatures ranging from 100 to 700 K, for AIN specimens with a room-temperature thermal conductivity of 220 and 121 W m-1 K-1 containing 0.1 and 1.4 wt % oxygen, respectively. These short phonon-defect scattering distances were considered to correspond to the separation of oxygen-related internal defects in AIN grains. Calculation of the mean phonon scattering frequencies indicated that the phonon scattering is dominated by phonon-defect scattering at temperatures below 270 K for an AIN specimen with an oxygen content of 0.1 wt %, and at temperatures below 350 K for an AIN specimen with an oxygen content of 1.4 wt %.