CHARACTERIZATION AND CRYSTALLITE GROWTH OF SEMICONDUCTING HIGH-TEMPERATURE-STABLE GA2O3 THIN-FILMS

被引：44
作者：
FLEISCHER, M
MEIXNER, H
机构：
[1] Siemens AG, Research Laboratories, Munich 83, 8000
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 24期
关键词：
D O I：
10.1007/BF00736223
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1728 / 1731
页数：4
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