MEASUREMENT OF VOLT-CAPACITANCE AND TRANSIENT RESPONSES OF METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES

被引：0

作者：

ROZHKOV, VA

SVERDLOV.AM

PANFILOV, BA

机构：

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR | 1971年 / 14卷 / 06期

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暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1729 / +

页数：1

共 6 条

[1] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +
[2] LITOVCHENKO VG, 1970, SEMICONDUCTOR ENGINE, V4, P145
[3] ROZHKOV VA, IN PRESS
[4] ROZHKOV VA, 1971, PRIB TEKH EKSP, V14, P127
[5] AUTOMATIC DISPLAY OF C-V CURVES FOR METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES
ZAININGER, KH
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07): : 1001 - +
[6] ZERBST MZ, 1966, Z ANGEW PHYS, V22