ANALYTICAL MODEL FOR GAAS PIN DIODES FOR A WIDE-RANGE OF CURRENTS AND TEMPERATURES

被引：10
作者：
BELLONE, S
COCORULLO, G
DELLACORTE, FG
HARTNAGEL, HL
SCHWEEGER, G
机构：
[1] CNR,IRECE,NAPLES,ITALY
[2] TH DARMSTADT,INST HOCHFREQUENZTECH,W-6100 DARMSTADT,GERMANY
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 06期
关键词：
D O I：
10.1016/0038-1101(92)90284-J
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model is proposed which can describe the I-V characteristics of a GaAs pin diode in a wide range of currents from room temperature up to 220-degrees-C and above. Be+ implanted test diodes with low leakage current have been produced. Good agreement was found between experimental and theoretical I-V plots over the full range of currents and temperatures. It is shown for good-quality diodes which current components are dominant for different operating conditions.
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页码：821 / 827
页数：7
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