ANALYTICAL MODEL FOR GAAS PIN DIODES FOR A WIDE-RANGE OF CURRENTS AND TEMPERATURES

被引：10

作者：

BELLONE, S

COCORULLO, G

DELLACORTE, FG

HARTNAGEL, HL

SCHWEEGER, G

机构：

[1] CNR,IRECE,NAPLES,ITALY

[2] TH DARMSTADT,INST HOCHFREQUENZTECH,W-6100 DARMSTADT,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 06期

关键词：

D O I：

10.1016/0038-1101(92)90284-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model is proposed which can describe the I-V characteristics of a GaAs pin diode in a wide range of currents from room temperature up to 220-degrees-C and above. Be+ implanted test diodes with low leakage current have been produced. Good agreement was found between experimental and theoretical I-V plots over the full range of currents and temperatures. It is shown for good-quality diodes which current components are dominant for different operating conditions.

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收藏

页码：821 / 827

页数：7

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