MICROWAVE AMPLIFICATION IN AVALANCHING SILICON P-N JUNCTIONS

被引：0

|

作者：

GORONKIN, H

机构：

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1970年 / 15卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：378 / &

相关论文

共 50 条

[31] ANOMALOUS SURFACE CHANNELS ON SILICON P-N JUNCTIONS
SOLOMON, R
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1791 - 1799
[32] INFLUENCE OF DEFORMATION ON PROPERTIES OF SILICON P-N JUNCTIONS
POLYAKOV.AL
SHKLOVSK.VV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 163 - +
[33] Breakdown enhancement in silicon nanowire p-n junctions
Agarwal, P.
Vijayaraghavan, M. N.
Neuilly, F.
Hijzen, E.
Hurkx, G. A. M.
NANO LETTERS, 2007, 7 (04) : 896 - 899
[34] AMPLIFICATION OF MINORITY CARRIER CURRENT IN NONIDEAL P-N JUNCTIONS
STAFEEV, VI
SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (10): : 2037 - 2052
[35] SURFACE CHANNEL STUDIES ON SILICON P-N JUNCTIONS
SOLOMON, R
JOHNSON, PO
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : C208 - C208
[36] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
TAUC, J
NATURE, 1958, 181 (4601) : 38 - 38
[37] NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS
MULLER, MW
GUCKEL, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (08) : 560 - +
[38] COMMENTS ON STATIC NEGATIVE RESISTANCE IN AVALANCHING SILICON P+-I-N+ JUNCTIONS
SCHARFETTER, DL
BARTELINK, DJ
DELOACH, BC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) : 970 - +
[39] TUNNEL BREAKDOWN IN P-N JUNCTIONS AND GENERATION OF MICROWAVE OSCILLATIONS
ALADINSK.VK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 517 - &
[40] Contactless Microwave Characterization of Encapsulated Graphene p-n Junctions
Ranjan, V.
Zihlmann, S.
Makk, P.
Watanabe, K.
Taniguchi, T.
Schonenberger, C.
PHYSICAL REVIEW APPLIED, 2017, 7 (05):

← 1 2 3 4 5 →