HUMIDITY SENSORS WITH REACTIVELY EVAPORATED AL2O3 FILMS AS POROUS DIELECTRICS

被引:22
作者
CHEN, Z
JIN, MC
ZHEN, C
机构
[1] Centre for Electronic Materials Analysis, University of Electronic Science and Technology of China, Chengdu
关键词
D O I
10.1016/0925-4005(90)85001-F
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The fabrication of humidity sensors employing an Au-porous Al2O3-Ni structure with reactively evaporated Al2O3 films as porous dielectrics is described. The capacitive and resistive characteristics of the sensors are studied. The sensors are sensitive to moisture levels as low as 1 ppmv (-76 °C dew point). Experiments have shown that treatment of these reactively evaporated Al2O3 films in an appropriate chemical salt solution and subsequent aging experiments through humidity cycles are necessary to fabricate humidity sensors with stable performance. © 1990.
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页码:167 / 171
页数:5
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