A MODEL CALCULATION OF THE DIELECTRIC BAND-STRUCTURE OF DIAMOND AND SILICON

被引：3

作者：

CASTRO, JDE ^{[1
]}

MUNIZ, RB ^{[1
]}

OLIVEIRA, LE ^{[1
]}

机构：

[1] UNIV ESTADAL CAMPINAS,INST FIS,BR-13081 CAMPINAS,SP,BRAZIL

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 158卷 / 02期

关键词：

D O I：

10.1002/pssb.2221580235

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model microscopic dielectric response previously proposed is used to calculate the dielectric band structure of diamond and silicon along several symmetry directions in the Brillouin zone. The most screened dielectric eigenpotentials at the Γ point are also obtained. Comparison of the present results with previous model calculations provides an indication that the model dielectric response used is satisfactorily accurate and realistically incorporates local‐field effects. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：743 / 752

页数：10

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