DEEP RADIATIVE LEVELS IN AS-GROWN AND IMPLANTED RAPID THERMAL ANNEALED INP

被引：19
作者：
RAO, MV
AINA, OA
FATHIMULLA, A
THOMPSON, PE
机构：
[1] BENDIX AEROSP TECHNOL CTR,COLUMBIA,MD 21045
[2] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期
关键词：
D O I：
10.1063/1.341677
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2426 / 2433
页数：8
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