SURFACE GROWTH TOPOGRAPHY OF GRAIN-BOUNDARIES IN AL THIN-FILMS

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] BARNA A, 1984, 8TH P EUR C EL MICR, P107

[3] SURFACE CHEMICAL PHENOMENA INFLUENCING THE GROWTH OF THIN-FILMS [J]. ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1980, 49 (1-3): : 77 - 85

[4] BARNA PB, 1983, VACUUM, V33, P25, DOI 10.1016/0042-207X(83)90523-7

[5] BARNA PB, 1983, 9TH P INT VAC C 5TH, P382

[6] BARNA PB, 1985, J PHYS, V46, P429

[7] BARNA PB, 1980, 8TH P INT VAC C CANN, P165

[8] MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 561 - 580

[9] THE INFLUENCE OF SOME EVAPORATION PARAMETERS ON THE STRUCTURE AND PROPERTIES OF THIN ALUMINUM FILMS [J]. THIN SOLID FILMS, 1982, 97 (03) : 259 - 276

[10] FRANCOMBE MH, 1965, P INT S BASIC PROBLE

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] BARNA A, 1984, 8TH P EUR C EL MICR, P107

[3] SURFACE CHEMICAL PHENOMENA INFLUENCING THE GROWTH OF THIN-FILMS [J]. ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1980, 49 (1-3): : 77 - 85

[4] BARNA PB, 1983, VACUUM, V33, P25, DOI 10.1016/0042-207X(83)90523-7

[5] BARNA PB, 1983, 9TH P INT VAC C 5TH, P382

[6] BARNA PB, 1985, J PHYS, V46, P429

[7] BARNA PB, 1980, 8TH P INT VAC C CANN, P165

[8] MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 561 - 580

[9] THE INFLUENCE OF SOME EVAPORATION PARAMETERS ON THE STRUCTURE AND PROPERTIES OF THIN ALUMINUM FILMS [J]. THIN SOLID FILMS, 1982, 97 (03) : 259 - 276

[10] FRANCOMBE MH, 1965, P INT S BASIC PROBLE