SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)

被引：171

作者：

TONG, SY

LUBINSKY, AR

MRSTIK, BJ

VANHOVE, MA

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] CALTECH,DEPT CHEM ENGN,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.17.3303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3303 / 3309

页数：7

共 20 条

[1] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726

[2] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J].

DUKE, CB ;

LUBINSKY, AR ;

LEE, BW ;

MARK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :761-768

[3]

DUKE CB, UNPUBLISHED

[4] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].

GUDAT, W ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837

[5] WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS [J].

HUIJSER, A ;

VANLAAR, J .

SURFACE SCIENCE, 1975, 52 (01) :202-210

[6] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS [J].

KNAPP, JA ;

LAPEYRE, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :757-760

[7] Relationship of surface-state band structure to surface atomic configuration of zinc blende (110) [J].

Levine, J. D. ;

Freeman, S. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3255-3272

[8] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].

LUBINSKY, AR ;

DUKE, CB ;

LEE, BW ;

MARK, P .

PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061

[9]

MACRAE AU, 1964, J APPL PHYS, V35, P1629

[10]

MACRAE AU, 1966, SEMICONDUCT SEMIMET, V2, P115

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