CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING

被引：99
|
作者：
STEIN, HJ
WEGENER, HAR
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
[2] SPERRY RAND CORP,RES CTR,SUDBURY,MA 01776
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 06期
关键词：
D O I：
10.1149/1.2133451
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：908 / 912
页数：5
相关论文
共 50 条
  • [1] CHARACTERIZATION OF SI3N4 POWDERS PREPARED BY SIH4 + NH3 REACTION
    PROCHAZKA, S
    GRESKOVICH, CD
    AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 300 - 300
  • [2] VARIATIONS OF TRAP STATES AND DANGLING BONDS IN CVD-SI3N4 LAYER ON SI SUBSTRATE BY NH3/SIH4 RATIO
    FUJITA, S
    TOYOSHIMA, H
    NISHIHARA, M
    SASAKI, A
    JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 795 - 812
  • [3] Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system
    Umemoto, H
    Morimoto, T
    Yamawaki, M
    Masuda, Y
    Masuda, A
    Matsumura, H
    THIN SOLID FILMS, 2003, 430 (1-2) : 24 - 27
  • [4] SYNCHROTRON RADIATION-EXCITED CVD OF SILICON-NITRIDE FILMS - A COMPARISON OF SIH4 + NH3 AND SIH4 + N2 GAS SYSTEMS
    KYURAGI, H
    URISU, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C455 - C456
  • [5] Atomic-layer doping in Si by alternately supplied NH3 and SiH4
    Jeong, YC
    Sakuraba, M
    Murota, J
    APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3472 - 3474
  • [6] Epitaxial growth of N delta doped Si films on Si(100) by alternately supplied NH3 and SiH4
    Jeong, YC
    Sakuraba, M
    Murota, J
    APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 197 - 201
  • [7] Effects of SiF4 and NH3 concentrations on the low-pressure CVD of polycrystalline α-Si3N4
    Lee, Woo Y.
    Strife, James R.
    Journal of the American Ceramic Society, 1993, 76 (02): : 542 - 544
  • [8] Matrix isolation investigation of the interaction of SiH4 with NH3 and (CH3)3N
    Meininger, DR
    Ault, BS
    JOURNAL OF PHYSICAL CHEMISTRY A, 2000, 104 (16): : 3481 - 3486
  • [9] Hydrogen Dependent Surface Morphology Study of Plasma Deposited SiNx:H Films for Two Gas Systems SiH4/NH3 and SiH4/N2
    Chopra, Siddheshwar
    Gupta, R. P.
    Banerjee, Souri
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (12) : 11216 - 11221
  • [10] Hydrogen Dependent Surface Morphology Study of Plasma Deposited SiNx:H Films for two Gas Systems SiH4/NH3 and SiH4/N2
    Chopra, Siddheshwar
    Gupta, R. P.
    Banerjee, Souri
    INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 376 - +
12345