GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS

被引：10

作者：

DUDECK, I ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER,INST ANGEW PHYS,D-4400 MUNSTER,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 12期

关键词：

D O I：

10.1016/0038-1101(77)90218-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1033 / 1036

页数：4

共 11 条

[1]

BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5

[2] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION [J].

BRAUN, S ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2789-2794

[3]

DUDECK I, UNPUBLISHED

[4]

DUDECK I, TO BE PUBLISHED

[5] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[7] DETERMINATION OF TEMPERATURE INDEPENDENCE OF CAPTURE CROSS-SECTION OF GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON [J].

KASSING, R ;

KAHLER, E ;

DUDECK, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01) :141-146

[8] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[9] DOUBLED INJECTION IN SEMICONDUCTORS HEAVILY DOPED WITH DEEP 2-LEVEL TRAPS [J].

WEBER, WH ;

FORD, GW .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1333-&

[10]

WOLF HF, 1969, SILICON SEMICONDUCTO, P31

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