OHMIC CONTACTS TO GAAS BY A SIMPLE LOW TEMPERATURE ALLOYING PROCESS

被引：14

作者：

JADUS, DK

REEDY, HE

FEUCHT, DL

机构：

来源：

关键词：

D O I：

10.1149/1.2426609

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：408 / &

共 5 条

[1] ALLOYS FOR GAAS DEVICES [J].

DALE, JR ;

JOSH, MJ .

[2] SIMPLE OHMIC CONTACTS ON GALLIUM ARSENIDE [J].

DALE, JR ;

TURNER, RG .

[3] CURRENT RUNAWAY IN N-GAAS BULK EFFECT DEVICES [J].

KNIGHT, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (07) :1004-&

[4] EVAPORATED OHMIC CONTACTS ON GAAS [J].

SCHMIDT, WA .

SCHWARTZ, B ;

SARACE, JC .