LOW-TEMPERATURE PHOTOLUMINESCENCE FROM BORON ION-IMPLANTED SI

被引：21
作者：
NOONAN, JR
KIRKPATRICK, CG
STREETMAN, BG
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, DEPT ELECT ENGR, URBANA, IL 61801 USA
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 21卷 / 04期
关键词：
D O I：
10.1080/00337577408232409
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：225 / 228
页数：4
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