LOW-TEMPERATURE PHOTOLUMINESCENCE FROM BORON ION-IMPLANTED SI

被引：21
作者：
NOONAN, JR
KIRKPATRICK, CG
STREETMAN, BG
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, DEPT ELECT ENGR, URBANA, IL 61801 USA
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 21卷 / 04期
关键词：
D O I：
10.1080/00337577408232409
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：225 / 228
页数：4
相关论文
共 50 条
  • [21] Microstructure evolution in low-temperature, ion-implanted AlxGa1-xAs
    Lagow, BW
    Robertson, IM
    Rehn, LE
    Coleman, JJ
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 3 - 14
  • [22] Microstructure evolution in low-temperature, ion-implanted AlxGa1-xAs
    Lagow, B.W.
    Robertson, I.M.
    Rehn, L.E.
    Coleman, J.J.
    Materials Research Society Symposium - Proceedings, 1999, 540 : 3 - 14
  • [23] LOW-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED SILICON POSITION-SENSITIVE DETECTORS
    ELAD, E
    SAREEN, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 75 - 84
  • [24] Room-temperature migration of ion-implanted boron in silicon
    Collart, EJH
    Weemers, K
    Gravesteijn, DJ
    van Berkum, JGM
    Cowern, NEB
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 53 - 58
  • [25] Photoluminescence study of ion-implanted silicon
    Terashima, K
    Ikarashi, T
    Watanabe, M
    Kitano, T
    NEC RESEARCH & DEVELOPMENT, 1998, 39 (03): : 289 - 298
  • [26] PHOTOLUMINESCENCE OF ION-IMPLANTED OXYGEN IN ZNTE
    MERZ, JL
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) : 2463 - &
  • [27] Photoluminescence study of ion-implanted silicon
    Terashima, Koichi
    Ikarashi, Taeko
    Watanabe, Masahito
    Kitano, Tomohisa
    NEC Research and Development, 1998, 39 (03): : 289 - 298
  • [28] Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions
    D. Bhattachar-yya
    D. A. Vinokurov
    G. M. Gusinskii
    V. A. Elyukhin
    O. V. Kovalenkov
    R. N. Kyutt
    J. H. Marsh
    V. O. Naidenov
    E. L. Portnoi
    Technical Physics Letters, 1998, 24 : 690 - 691
  • [29] Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon
    Chu, P.K. (paul.chu@cityu.edu.hk), 1600, American Institute of Physics Inc. (96):
  • [30] Low-temperature photoluminescence of hydrogen ion and plasma implanted silicon and porous silicon
    An, ZH
    Fu, RKY
    Li, WL
    Chen, P
    Chu, PK
    Li, KF
    Luo, L
    Tam, HL
    Cheah, KW
    Lin, CL
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 248 - 251
12345