DEFECT CENTERS IN OXYGEN-DEFICIENT RF-SPUTTERED SIO2-FILMS .1. ELECTRON-SPIN RESONANCE

被引：21
作者：
HICKMOTT, TW [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期
关键词：
D O I：
10.1063/1.1663367
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1050 / 1059
页数：10
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