DEFECT CENTERS IN OXYGEN-DEFICIENT RF-SPUTTERED SIO2-FILMS .1. ELECTRON-SPIN RESONANCE

被引：21

作者：

HICKMOTT, TW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.1663367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1050 / 1059

页数：10

共 54 条

[1]

Amosov A. V., 1970, Soviet Physics - Doklady, V14, P983

[2] SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J].

ANDERSON, GS ;

MAYER, WN ;

WEHNER, GK .

[3]

ANDERSON OL, 1960, NONCRYSTALLINE SOLID

[4]

AYSCOUGH PB, 1967, ELECTRON SPIN RESONA

[5]

BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141

[6] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J].

BENNETT, AJ ;

ROTH, LM .

[7]

Bruckner R., 1971, Journal of Non-Crystalline Solids, V5, P177, DOI 10.1016/0022-3093(71)90032-9

[8]

BRUCKNER R, 1971, J NONCRYST SOLIDS, V5, P123

[9]

COHEN S, 1964, VERRES REFRACT, V20, P336

[10]

DAVIDSE PD, 1966, J APPL PHYS, V37, P74