HIGH-POWER 0.98-MU-M STRAINED-QUANTUM-WELL LASERS FABRICATED USING IN-SITU MONITORED REACTIVE ION-BEAM ETCHING

被引：11

作者：

HAMAMOTO, K

CHIDA, H

MIYAZAKI, T

ISHIKAWA, S

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 06期

关键词：

D O I：

10.1109/68.388737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.98-mu m wavelength strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.

引用

页码：602 / 604

页数：3

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