HIGH-POWER 0.98-MU-M STRAINED-QUANTUM-WELL LASERS FABRICATED USING IN-SITU MONITORED REACTIVE ION-BEAM ETCHING

被引：11

作者：

HAMAMOTO, K

CHIDA, H

MIYAZAKI, T

ISHIKAWA, S

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 06期

关键词：

D O I：

10.1109/68.388737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.98-mu m wavelength strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.

引用

页码：602 / 604

页数：3

共 50 条

[1] DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS/ALGAAS LASERS UNDER HIGH-POWER OPERATION
FUKUDA, M
OKAYASU, M
TEMMYO, J
NAKANO, J
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 471 - 476
[2] HIGH-POWER 0.98-MU-M INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS
SIN, YK
HORIKAWA, H
ELECTRONICS LETTERS, 1993, 29 (10) : 920 - 922
[3] HIGH-POWER 0.98-MU-M STRAINED-LAYER QUANTUM-WELL LASERS WITH INGAP CLADDING
IJICHI, T
OHKUBO, M
IKETANI, A
KIKUTA, T
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1994, 7 (03) : 139 - 143
[4] INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS FOR HIGH-POWER OPERATION AT 0.98-MU-M
SIN, YK
HORIKAWA, H
KAMIJOH, T
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 966 - 968
[5] LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS/INGAASP/INGAP LASERS
CHANGHASNAIN, CJ
BHAT, R
LEBLANC, H
KOZA, MA
ELECTRONICS LETTERS, 1993, 29 (01) : 1 - 2
[6] TEMPERATURE-DEPENDENCE OF LIGHT-CURRENT CHARACTERISTICS OF 0.98-MU-M AL-FREE STRAINED-QUANTUM-WELL LASERS
VAIL, EC
NABIEV, RF
CHANGHASNAIN, CJ
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) : 1303 - 1305
[7] 0.98-MU-M STRAINED QUANTUM-WELL LASERS FOR COUPLING HIGH OPTICAL POWER INTO SINGLE-MODE FIBER
WADA, M
YOSHINO, K
YAMADA, M
TEMMYO, J
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 953 - 955
[8] 0.98-MU-M INGAAS-INGAP STRAINED-QUANTUM-WELL LASERS WITH GAAS-INGAP SUPERLATTICE OPTICAL CONFINEMENT LAYER
USAMI, M
MATSUSHIMA, Y
TAKAHASHI, Y
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 244 - 249
[9] 0.98-MU-M STRAINED-LAYER GAINAS/GAINASP/GAINP QUANTUM-WELL LASERS
ZHANG, G
NAPPI, J
OVTCHINNIKOV, A
SAVOLAINEN, P
ASONEN, H
ELECTRONICS LETTERS, 1992, 28 (23) : 2171 - 2172
[10] EXTREMELY HIGH CHARACTERISTIC TEMPERATURE T-0 OF 0.98-MU-M INGAAS/INGAP STRAINED-QUANTUM-WELL LASERS WITH GAAS/INGAP SUPERLATTICE OPTICAL CONFINEMENT LAYER
USAMI, M
MATSUSHIMA, Y
TAKAHASHI, Y
ELECTRONICS LETTERS, 1995, 31 (03) : 192 - 193

← 1 2 3 4 5 →