ANISOTROPIC VOIGT EFFECT IN N-TYPE SILICON

被引：2

作者：

SRIVASTAVA, GP ^{[1
]}

KOTHARI, PC ^{[1
]}

机构：

[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 7, INDIA

来源：

PHYSICA | 1973年 / 63卷 / 03期

关键词：

D O I：

10.1016/0031-8914(73)90153-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：570 / 576

页数：7

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