ANISOTROPIC VOIGT EFFECT IN N-TYPE SILICON

被引：2
作者：
SRIVASTAVA, GP [1 ]
KOTHARI, PC [1 ]
机构：
[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 7, INDIA
来源：
PHYSICA | 1973年 / 63卷 / 03期
关键词：
D O I：
10.1016/0031-8914(73)90153-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：570 / 576
页数：7
相关论文
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