TIS2 AND TIS3 THIN-FILMS PREPARED BY MOCVD

Thin films of TiS2 and TiS3 have been prepared by thermal chemical vapor deposition by reacting TiCl4 and a series of sulfur sources [hexamethyldisilthiane ((CH3)3SiSSi(CH3)3), t-butyl sulfide ((CH3)3CSC(CH3)3), and t-butyl disulfide ((CH3)3CSSC(CH3)3)]. Thin films of TiS3 were prepared by reacting TiCl4 and TBDS at a deposition temperature less than 260°C. As the deposition temperature was increased, TiS2 also formed within the deposited film, until at temperatures greater than 400°C only TiS2 was formed. The use of the other sulfurizing sources resulted in the deposition of only TiS2 throughout the temperature range studied (200-550°C). The morphology of the TiS2 films varied remarkably with deposition temperature. At low temperatures the films were very dense and X-ray diffraction indicated that the films were deposited preferentially with the crystallographic "c" axis perpendicular to the substrate. As the temperature increased above 300°C, a porous honeycomb structure was deposited with the crystallographic "c" axis parallel to the substrate. © 1992.